Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF
About The 1mm.Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21
Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.82 /10
Votes :- 5
