Hammond Clear Aluminium Instrument Case, 220 X 191 X 66mm

Phoenix Contact VS-PPC-F1-RJ45-MNNA-1R-FJJ Series RJ45 Panel Mounting Frame, Unshielded, Length: 62.

Silicon Labs C8051F850-C-GU, 8bit CIP-51 Microcontroller, C8051F, 25MHz, 8 kB Flash, 24-Pin QSOP, Mounting Type: Surface Mount, RAM Size: 512 B, Number of PWM Units: 1 x 16 bit.

Sefram GE.3421 Oscilloscope Probe, High Voltage Type, 100MHz, x100dB, BNC Connector, Maximum Common Mode Input Voltage: 4000V.

Phoenix Contact Circular Connector, 4 Contacts, Cable Mount, M12 Connector, Plug, Male, IP67, SACC Series, Current Rating: 12A, Body Orientation: Right Angle, Voltage Rating: 63 V dc, Contact Material: CuZn, MPN: 1408988.

75V.STMicroelectronics Dual N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK STD9N60M6, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.

Omron 4 Way Surface Mount DIP Switch 4PST, Contact Material: Gold Plated, Actuator Type: Slide, Contact Current Rating: 25 mA@ 24 V dc, Mechanical Life: 1000Operations, Maximum Operating Temperature: +70°C, Minimum Operating Temperature: -20°C, Operating Temperature Range: -20 → +70°C, Dielectric Strength: 500V ac, MPN: A6S-4102-H.

Hammond Clear Aluminium Instrument Case, 220 x 191 x 66mm, External Length: 220 mm, External Width: 191 mm, External Height: 66 mm, MPN: 1455U2202.

1mm.Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.

Hammond Clear Aluminium Instrument Case, 220 x 191 x 66mm, External Length: 220 mm, External Width: 191 mm, External Height: 66 mm, MPN: 1455U2202.

1mm.Infineon N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.