onsemi Dual N-Channel MOSFET, 680 mA, 25 V, 6-Pin SOT-23 FDC6303N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.65V, Maximum Power Dissipation: 900 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: +8 V, Length: 3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual N-Channel MOSFET, 680 MA, 25 V, 6-Pin SOT-23 FDC6303N
Specifications of Onsemi Dual N-Channel MOSFET, 680 MA, 25 V, 6-Pin SOT-23 FDC6303N | |
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