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Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF

About The Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C

Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF

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Infineon N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620TRLPBF
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