Infineon N-Channel MOSFET, 114 A, 60 V, 6 + Tab-Pin ME IRF7580MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 96 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.35mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 114 A, 60 V, 6 + Tab-Pin ME IRF7580MTRPBF
Specifications of Infineon N-Channel MOSFET, 114 A, 60 V, 6 + Tab-Pin ME IRF7580MTRPBF | |
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