Infineon Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 X 6 Dual IPG16N10S461AATMA1
About The Infineon Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.061 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3
Infineon Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.061 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Number of Elements per Chip: 2, Series: OptiMOS-T2
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 X 6 Dual IPG16N10S461AATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 X 6 Dual IPG16N10S461AATMA1 | |
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