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Infineon P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF

About The 2 A, 40 V, 8-Pin SOIC IRF7241TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Infineon P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF

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Infineon P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC IRF7241TRPBF
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