onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC SI4435DY, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 35 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.57mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC SI4435DY
Specifications of Onsemi P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC SI4435DY | |
---|---|
Category | |
Instock | instock |
Last Updated