Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.11 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: CoolMOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1
Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1 | |
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