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Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1

About The 6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.5V, Series: CoolMOS

Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.11 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Series: CoolMOS

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1

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Infineon Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1
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