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Infineon N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1

About The 7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS P7

Infineon N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS P7

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Infineon N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1

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Infineon N-Channel MOSFET Transistor & Diode, 5.7 A, 700 V, 3-Pin IPAK IPSA70R2K0P7SAKMA1
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Rating :- 9.56 /10
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