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Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1

About The .8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS

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Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1

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Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1
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    • Infineon Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin IPAK IPS60R1K0CEAKMA1

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