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Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

About The Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 165 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.02mm

Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 165 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF

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Infineon P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 IRLML5203TRPBF
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