Vishay N-Channel MOSFET, 600 MA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3
About The Vishay N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 480 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 280 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.2mm, Maximum Operating Temperature: +150 °C
Vishay N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 480 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 280 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.2mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 600 MA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay N-Channel MOSFET, 600 MA, 30 V, 3-Pin SOT-323 SI1302DL-T1-E3 | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.82 /10
Votes :- 7
