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Infineon N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1

About The 7 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 2.58mm

Infineon N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.7 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 2.4mm, Length: 10.58mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1

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Infineon N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1
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