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DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57

About The 3V, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Length: 3mm, Maximum Operating Temperature: +150 °C.DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 71 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0

DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 71 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Length: 3mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57

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DiodesZetex P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG3415U-7-57
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