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Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ

About The 36mm.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ, Package Type: DFN1010D-3, SOT1215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 87 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ

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Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3 PMXB56ENZ
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