Infineon N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 280 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 30.4 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.65mm, Maximum Operating Temperature: +150 °C
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Infineon N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2
Specifications of Infineon N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2 | |
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