Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3
Specifications of Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3 | |
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