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Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3

About The Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 81 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1

Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 81 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3

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Vishay Dual N-Channel MOSFET, 7 A, 60 V, 8-Pin SOIC SQ4946AEY-T1_GE3
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