Nexperia Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 BSS138PS,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.9V, Maximum Power Dissipation: 320 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.2mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Nexperia Dual N-Channel MOSFET, 320 MA, 60 V, 6-Pin SOT-363 BSS138PS,115
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