Vishay N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 SIB406EDK-T1-GE3
About The 6V, Maximum Power Dissipation: 10 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C
Vishay N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 SIB406EDK-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 63 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 10 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 1.7mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 SIB406EDK-T1-GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 SIB406EDK-T1-GE3 | |
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