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Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3

About The 4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C.1 W, 3

Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 72 mΩ, 150 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.1 W, 3.4 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3

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Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3
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