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Vishay N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3

About The Vishay N-Channel MOSFET, 5.072 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Series: TrenchFET

Vishay N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.072 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Series: TrenchFET

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3

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Vishay N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SO-8 SI4900DY-T1-E3
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