Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 SI3585CDV-T1-GE3, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.058 O,0.195 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Series: TrenchFET
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Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 SI3585CDV-T1-GE3
Specifications of Vishay Dual N/P-Channel-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 SI3585CDV-T1-GE3 | |
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