Onsemi MJE18008G NPN Transistor, 8 A, 450 V, 3-Pin TO-220AB
About The 28 x 4.onsemi MJE18008G NPN Transistor, 8 A, 450 V, 3-Pin TO-220AB, Mounting Type: Through Hole, Maximum Power Dissipation: 125 W, Minimum DC Current Gain: 14, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V dc, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 1 MHz, Dimensions: 10
onsemi MJE18008G NPN Transistor, 8 A, 450 V, 3-Pin TO-220AB, Mounting Type: Through Hole, Maximum Power Dissipation: 125 W, Minimum DC Current Gain: 14, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V dc, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 1 MHz, Dimensions: 10.28 x 4.82 x 15.75mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Onsemi MJE18008G NPN Transistor, 8 A, 450 V, 3-Pin TO-220AB
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Specifications of Onsemi MJE18008G NPN Transistor, 8 A, 450 V, 3-Pin TO-220AB | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.72 /10
Votes :- 9
