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Onsemi N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z

About The 5 A, 600 V, 3-Pin IPAK FCU900N60Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6

onsemi N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.8mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z

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Onsemi N-Channel MOSFET, 4.5 A, 600 V, 3-Pin IPAK FCU900N60Z
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