Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 43 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.01mm, Length: 10.41mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF
Specifications of Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF | |
---|---|
Category | |
Instock | instock |
Last Updated