Onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949
About The onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949 | |
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