Onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT1G
About The onsemi P-Channel MOSFET, 1.7V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +12 V, Length: 3
onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.25V, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 400 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: +12 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT1G
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi P-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 NTR1P02LT1G | |
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