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Onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

About The 5V, Maximum Power Dissipation: 113.onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 113.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 5.8mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G

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Onsemi N-Channel MOSFET, 191 A, 30 V, 8-Pin SO-8FL NTMFS4833NT1G
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