Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1
About The 2V, Minimum Gate Threshold Voltage: 1.35mm, Maximum Operating Temperature: +150 °C
Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5.35mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1 | |
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