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Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

About The 5V, Series: AEC-Q101, Automotive, TrenchFET®.00124 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00124 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: AEC-Q101, Automotive, TrenchFET®

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

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Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3
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    • Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

    Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

    00124 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.

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    • Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

    Vishay N-Channel MOSFET, 350 A, 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3

    5V, Series: AEC-Q101, Automotive, TrenchFET®.00124 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.

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