Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
About The 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10
Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.16mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1 | |
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