Infineon N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 127 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.36mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1
Specifications of Infineon N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1 | |
---|---|
Category | |
Instock | instock |
Last Updated