Vishay N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Si1416EDH-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 77 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 2.2mm, Maximum Operating Temperature: +150 °C
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Vishay N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Si1416EDH-T1-GE3
Specifications of Vishay N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Si1416EDH-T1-GE3 | |
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