Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin D2PAK IPB60R360P7ATMA1
About The 36 Ω, Maximum Gate Threshold Voltage: 4V, Series: 600V CoolMOS P7.Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin D2PAK IPB60R360P7ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0
Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin D2PAK IPB60R360P7ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.36 Ω, Maximum Gate Threshold Voltage: 4V, Series: 600V CoolMOS P7
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin D2PAK IPB60R360P7ATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 9 A, 600 V, 3-Pin D2PAK IPB60R360P7ATMA1 | |
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