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Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115

About The 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.

Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 12.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.65mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115

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Nexperia N-Channel MOSFET, 9 A, 30 V, 8-Pin DFN2020 PMPB11EN,115
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