Schneider Electric NSYS Series Steel Single-Door-Door Floor Standing Enclosure, Opaque Door, IP66, 862 X 800 X 430mm

STMicroelectronics ULN2002D1013TR, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000, 16-Pin SOIC, Mounting Type: Surface Mount, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.

35 x 1mm, MPN: NST65010MW6T1G.onsemi NST65010MW6G Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Minimum DC Current Gain: 220, Transistor Configuration: Isolated, Maximum Collector Base Voltage: -80 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 100 MHz, Dimensions: 2.2 x 1.

1kA.onsemi ON Semi 650V 30A, SiC Schottky Diode, 2-Pin TO-220 FFSP3065B, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 1.

51mm, Maximum Operating Temperature: +200 °C.onsemi MJ21193G PNP Transistor, -16 A, -250 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -400 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 39.67 x 8.

onsemi MJ21193G PNP Transistor, -16 A, -250 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -400 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 39.37 x 26.51mm, Maximum Operating Temperature: +200 °C.67 x 8.