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Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

About The Vishay N-Channel MOSFET, 4.73mm, Maximum Operating Temperature: +150 °C

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.73mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

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Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
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    • Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

    Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

    Vishay N-Channel MOSFET, 4.73mm, Maximum Operating Temperature: +150 °C.

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    • Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
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