Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1

Name: Infineon & Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 MΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 313 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm
Brand: Infineon
SKU: CAXD-644523
Price: 61.35 EUR
Availability: InStock

About The 1V, Maximum Power Dissipation: 313 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 313 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm

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Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1
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Last Updated December 13th, 2023 09:59 pm

Infineon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1

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