onsemi N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 FDC855N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 39 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3mm, Maximum Operating Temperature: +150 °C
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Onsemi N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 FDC855N
Specifications of Onsemi N-Channel MOSFET, 6.1 A, 30 V, 6-Pin SOT-23 FDC855N | |
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