Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110
About The Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET
Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.045 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Series: HEXFET
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon Dual N-Channel MOSFET Transistor & Diode, 180 A, 100 V, 3-Pin TO-247AC AUIRFP4110 | |
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