Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
About The 7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.04mm, Maximum Operating Temperature: +150 °C
Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay P-Channel MOSFET, 4.7 A, 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3 | |
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