STMicroelectronics N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STB18N60DM2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 90 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Length: 9.35mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
STMicroelectronics N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STB18N60DM2
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