Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK IPB65R095C7ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 95 mO, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1
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Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK IPB65R095C7ATMA2
Specifications of Infineon N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK IPB65R095C7ATMA2 | |
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