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Infineon N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1

About The 4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 800 mO, Maximum Gate Threshold Voltage: 3.Infineon N-Channel MOSFET, 8

Infineon N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 800 mO, Maximum Gate Threshold Voltage: 3.5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1

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Infineon N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-220 FP IPAN60R800CEXKSA1
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