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Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2

About The 0127 Ω, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS.Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0

Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0127 Ω, Maximum Gate Threshold Voltage: 2V, Series: OptiMOS

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2

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Infineon N-Channel MOSFET, 50 A, 55 V, 3-Pin DPAK IPD50N06S2L13ATMA2
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