Infineon N-Channel MOSFET, 18 A, 600 V, 3-Pin DPAK IPD60R180P7SAUMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.18 Ω, Maximum Gate Threshold Voltage: 4V, Series: 600V CoolMOS P7
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 18 A, 600 V, 3-Pin DPAK IPD60R180P7SAUMA1
Specifications of Infineon N-Channel MOSFET, 18 A, 600 V, 3-Pin DPAK IPD60R180P7SAUMA1 | |
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