Onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK
About The onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Minimum DC Current Gain: 60, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V dc, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 20 MHz, Dimensions: 6.73 x 2
onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Minimum DC Current Gain: 60, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V dc, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 20 MHz, Dimensions: 6.73 x 2.38 x 6.22mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors
Specifications of Onsemi MJD45H11-1G PNP Transistor, -8 A, -80 V, 3-Pin IPAK | |
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