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Onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

About The 05 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1

onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.05 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 8.1mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

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Onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG
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    • onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

    onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

    05 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.

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    onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG

    2V, Minimum Gate Threshold Voltage: 1.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.

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